- According to the demands of Broadband & High-power Microwave Systems and Active Phased Array Radar, the latest miniaturized high-power GaN power modules are introduced. With the adoption of advanced in-plane matching synthesis technology and frequency coverage of L~X band, based on mature thin film hybrid integration process, covered with general-purpose cermet housing, the products adapt to various pulse width duty cycle and continuous wave working conditions, meet the requirements of broadband, high power, high efficiency and temperature of high-performance RF/microwave systems such as Satellite Communication and Telemetry Remote Control Claim.
- The GaN devices used in the module are all based on domestically produced materials and processes and is stable, reliable and has been applied in engineering.
|1 – L, S-band Continuous Wave GaN Power Amplifier
2 – S-band GaN Power Amplifier Module
3 – C-band Continuous Wave GaN Power Amplifier
4 – X-band Continuous Wave GaN Power Amplifier