JGC-3031A

JGC-3031A MIL-Spec Photo-MOS Relay

DPDT (2H, 2D)
Ceramic housing standard DIP-16 package
Input and output photovoltaic isolation
N.O. contact is enhanced MOSFET output, N.C. contact is depleted MOSFET output
Fast switching speed
Temperature adaptability
High reliability
Standard: Q/RY.J01159.33—2011

JGC-3031A MIL-Spec Photo-MOS Relay

Standard

Q/RY.J01159.33—2011

Application

Suitable for defense, scientific research, industrial control and modern management, such as isolated drives for aerospace, aviation and terrestrial electronics, coupled amplification of digital signals, switching of analog signals, power transistor drive, measuring instruments, etc., suitable for the harsh environments.

Technical Parameters	Min.	Typ.		Max.	Unit
Input
Rated input current		10			mAd.c.
Input current range	5			25	mAd.c.
Input switching current				5.0	mAd.c.
Input shutdown voltage	0				Vd.c.
On time				1.5	ms
Shutdown time				0.4	ms
Output
Output configuration	DPDT
Number of output circuit groups	N.O. (2H)		N.C. (2D)
Rated output current	±0.3		±0.2		Ad.c.
Rated output voltage	±50				Vd.c.
Output on-resistance	≤2.0				Ω
Output leakage current	≤1.0				μA
Transient voltage	±60				Vd.c
Electrical Insulation Specifications
Insulation resistance	1000				MΩ
Dielectric withstand voltage				1000	Vr.m.s.
Power consumption				1.6	W
Environmental Specifications
Seal leak rate	5×10^-3				Pa·cm³/s
Random vibration	40 10~2000				(m/s²)²/Hz, Hz
High Frequency Vibration	294, 10~3000				m/s², Hz
Constant acceleration	49000				m/s²
Shock	14700, 0.5				m/s², ms
Storage temperature	-55~125				℃
Operating temperature	-55~105				℃
Other parameters
Weight				2.5	g
Dimensions	20.5×7.6×4.2				mm


Fig. 1: Turn-On time vs. Output Voltage	Fig. 2: Output Current vs. Temperature curve	Fig. 3: Inrush Current vs. Inrush Current duration curve

Fig. 4: On time vs. Input Current curve	Fig. 5: Input Current vs. Input Voltage curve	Fig. 6: Output leakage current vs. Temperature curve