JGW-3015

JGW-3015 MIL-Spec Photo-MOS Relay

Standard

Q/RY.J01159.1—2009

 

Application

Suitable for defense, scientific research, industrial control and modern management, such as isolated drive for aerospace, aviation and terrestrial electronic equipment, coupled amplification of digital signals, switching of analog signals, power transistor drive, measuring instruments, etc.

 

Technical Parameters	Min.	Typ.			Max.		Unit
Input
Rated input current		10					mAd.c.
Input current range	5				20		mAd.c.
Input switching current					5.0		mAd.c.
Input shutdown voltage	0.8						Vd.c.
On time					2.0		ms
Shutdown time					0.5		ms
Output
Output configuration	Bidirectional		DC
Number of output circuit groups	1H (1 group N.O.)
Rated output current	±2.5			4.5		Ad.c.
Rated output voltage	±15			15		Vd.c.
Output leakage drop	≤0.1			≤0.04		Vd.c.
Output leakage current	≤1.0					μA
Transient voltage	±20			20		Vd.c
Electrical Insulation Specifications
Insulation resistance	1000						MΩ
Dielectric withstand voltage					1000		Vr.m.s.
Power consumption					0.79		W
Environmental Specifications
Seal leak rate	5×10-3						Pa·cm3/s
Random vibration	40 10~2000						(m/s2)2/Hz, Hz
High Frequency Vibration	294, 10~3000						m/s2, Hz
Constant acceleration	49000						m/s2
Shock	14700, 0.5						m/s2, ms
Storage temperature	-55~125						℃
Operating temperature	-55~105						℃
Other parameters
Weight					1.5		g
Dimensions	9.91×7.6×4.2						mm

 

Fig. 1: Turn-On time vs. Output Voltage	Fig. 2: Output Current vs. Temperature curve	Fig. 3: Inrush Current vs. Inrush Current duration curve
Fig. 4: On time vs. Input Current curve	Fig. 5: Input Current vs. Input Voltage curve	Fig. 6: Output leakage current vs. Temperature curve

 

Drawing
DIP	SMD

 

Internal circuit diagram	Overhead wiring diagram

 

Order Mark

Example: JGW-3015 Y

JG	W	–	3015	Y
Solid relay main name	Shape symbol (W, C or X)		Design Number	Screening level

Note: The screening level (Y or W) and DIP/SMD should be indicated.