JGW-3023

JGW-3023 MIL-Spec Photo-MOS Relay

Standard

Q/RY.J01159.2—2010

 

Application

Suitable for defense, scientific research, industrial control and modern management, such as isolating drives for aerospace, aviation and terrestrial electronic devices, coupling of analog signals for digital signals, power transistor drive, measuring instruments, etc., suitable for harsh environments.

 

Technical Parameters	Min.	Typ.	Max.		Unit
Input
Rated input current		10			mAd.c.
Input current range	5		25		mAd.c.
Input switching current			5.0		mAd.c.
Input shutdown voltage	0.8				Vd.c.
On time			1.5		ms
Shutdown time			0.4		ms
Output
Output configuration	Bidirectional
Number of output circuit groups	2H (2 group N.O.)
Rated output current	±0.5			Ad.c.
Rated output voltage	±50			Vd.c.
Output on-resistance	≤2			Ω
Output leakage current	≤1.0			μA
Transient voltage	±60			Vd.c
Electrical Insulation Specifications
Insulation resistance	1000				MΩ
Dielectric withstand voltage			1000		Vr.m.s.
Power consumption			0.8		W
Environmental Specifications
Seal leak rate	1×10-2				Pa·cm3/s
Random vibration	40 10~2000				(m/s2)2/Hz, Hz
High Frequency Vibration	294, 10~3000				m/s2, Hz
Constant acceleration	49000				m/s2
Shock	14700, 0.5				m/s2, ms
Storage temperature	-55~125				℃
Operating temperature	-55~105				℃
Other parameters
Weight			1.5		g
Dimensions	10.16×7.6×3.8				mm

 

Fig. 1: Turn-On time vs. Output Voltage	Fig. 2: Output Current vs. Temperature curve	Fig. 3: Inrush Current vs. Inrush Current duration curve
Fig. 4: On time vs. Input Current curve	Fig. 5: Input Current vs. Input Voltage curve	Fig. 6: Output leakage current vs. Temperature curve

 

Drawing
Internal circuit diagram	Overhead wiring diagram

 

Order Mark

Example: JGW-3023Y

JG	W	–	3023	Y
Solid relay main name	Shape symbol (W, C or X)		Design Number	Screening level

Note: The screening level (Y or W) and DIP/SMD should be indicated.